
Mini Gas-Mixing CVD System XN-T1200-S5020-IC – 1200°C, 2-Channel MFC Gas Mixing, Quartz Tube Φ50 mm, ±1°C Accuracy | Xnergy
Mini Gas-Mixing CVD System XN-T1200-S5020-IC — compact 1200 °C chemical vapor deposition system integrating a mini tube furnace, 2-channel gas-mixing unit with mass flow meters (±1% FS accuracy), and rotary vacuum pump unit (ultimate vacuum 10 Pa) for precise atmosphere-controlled CVD experiments. Maximum temperature 1200 °C, working temperature ≤ 1100 °C, ±1 °C temperature control accuracy, heating rate 0–20 °C/min (recommended 0–10 °C/min), 30-stage PID programmable control. Built with quartz tube Φ50 × 800 mm, alumina ceramic fiber insulation, 0Cr27Al7Mo2 resistance wire heating element, N-type thermocouple, customizable flanges with gas valves and pressure gauge. Supports Ar, H₂, N₂, and other process gases. One-year warranty plus lifetime technical support (heating elements and furnace tube are consumables, not covered). Power supply configurable per local electrical standards.
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Name: Mini Gas-Mixing CVD System XN-T1200-S5020-IC
Equipment Type: Laboratory 1200 °C Mini Chemical Vapor Deposition System with 2-Channel Gas-Mixing Unit and Vacuum Pump
Product Code: XN-T1200-S5020-IC
Product Description:
The Mini Gas-Mixing CVD System XN-T1200-S5020-IC is a compact, integrated chemical vapor deposition platform combining a mini tube furnace, a 2-channel gas-mixing unit with mass flow meters, and a rotary vacuum pump unit (ultimate vacuum 10 Pa). Designed for precise, reproducible CVD experiments at the laboratory scale, the system delivers accurate, independent control of two process gas channels (Ar, H₂, N₂, and other gases), with mass flow meter accuracy of ±1% FS, enabling consistent gas composition and flow rates for demanding thin-film deposition, annealing, and surface treatment processes.
The control system is internationally advanced, featuring safety, reliability, simple operation, high temperature-control accuracy, good heat preservation, and high furnace temperature uniformity. The system can be evacuated to 10 Pa via the integrated rotary vacuum pump and backfilled with protective or reactive gases through the precision mass flow controllers. As a result, the XN-T1200-S5020-IC is widely used in graphene synthesis, lithium battery material research, crystal annealing, luminescent material processing, and other CVD-based experiments in universities, scientific research institutes, and industrial laboratories.
Main Functions and Features:
- Integrated 2-channel gas-mixing unit with mass flow meters — independent control of two gas channels (Ar, H₂, N₂, and other process gases) with ±1% FS flow accuracy, enabling precise and reproducible gas compositions for CVD and atmosphere-controlled experiments.
- Integrated rotary vacuum pump unit (ultimate vacuum 10 Pa) — with dust filter and digital pressure gauge for monitoring system pressure in real time; enables pre-evacuation before gas backfill and low-pressure CVD operation.
- Customizable flanges with gas valves and pressure gauge — flexible sealing system accommodating different process configurations; supports both vacuum and positive-pressure atmosphere experiments.
- High-quality 0Cr27Al7Mo2 resistance wire heating element with alumina ceramic fiber insulation — excellent thermal insulation performance, durable, high tensile strength, high purity, and energy-saving operation.
- N-type thermocouple with ±1 °C control accuracy — 30-stage PID programmable temperature control with self-tuning; over-temperature protection automatically cuts off the heating circuit.
- Touch-screen temperature controller available — optional LCD touch-screen controller with AI-assisted PID adjustment, self-tuning, and 30-stage program compilation; heating curve data can be stored and output.
- Quartz tube Φ50 × 800 mm — customizable tube size and sealing configuration available upon request to match specific process requirements.
- In-house development and manufacturing — equipment supports lifetime parts replacement and upgrade services.
Main Technical Parameters:
| Parameter | Value |
|---|---|
| Product Name | Mini Gas-Mixing CVD System |
| Model | XN-T1200-S5020-IC |
| Insulation Material | Alumina ceramic fiber |
| Furnace Tube | Quartz, Φ50 × 800 mm (customizable per customer requirements) |
| Heating Zone Length | 200 mm |
| Maximum Temperature | 1200 °C |
| Working Temperature | ≤ 1100 °C |
| Temperature Control Accuracy | ±1 °C |
| Temperature Control | Intelligent 30-stage programmable controller with over-temperature protection (LCD touch-screen controller available) |
| Heating Rate | 0–20 °C/min (recommended 0–10 °C/min) |
| Heating Element | 0Cr27Al7Mo2 resistance wire |
| Temperature Sensor | N-type thermocouple |
| Sealing | Customizable flanges with gas valves and pressure gauge |
| Power Supply | Configurable according to local electrical standards |
| After-Sales | One-year warranty plus lifetime technical support (heating elements and furnace tube are consumables, not covered) |
Gas Mixing Unit:
| Parameter | Value |
|---|---|
| Number of Gas Channels | 2 independent channels |
| Compatible Gases | Ar, H₂, N₂, and other process gases |
| Flow Control | Mass flow meters (MFC) |
| Flow Rate Accuracy | ±1% FS |
Vacuum Pump Unit:
| Parameter | Value |
|---|---|
| Vacuum Pump Type | Rotary vacuum pump |
| Ultimate Vacuum | 10 Pa |
| Accessories | Dust filter; digital pressure gauge |
Values measured by Xnergy. Typical values for reference; not guaranteed unless otherwise specified.
Application Areas:
- Graphene synthesis and growth via chemical vapor deposition under controlled H₂/CH₄/Ar atmospheres
- Lithium battery material research — CVD carbon coating of cathode and anode materials, surface modification under controlled atmosphere
- Crystal annealing and post-growth thermal treatment under inert or reactive gas atmospheres
- Luminescent material processing — synthesis and annealing of phosphors and other optical materials requiring precise atmosphere control
- Thin-film deposition and surface treatment requiring accurate multi-gas mixing and vacuum pre-treatment
- Semiconductor and electronic material CVD processes at moderate temperatures (≤ 1100 °C working)
- University, research-institute, and industrial laboratory CVD experiments and small-batch production
Recommended Operating Procedure:
1. Verify all electrical, gas, and vacuum connections are properly installed before powering on the XN-T1200-S5020-IC. Confirm that the gas cylinders are connected with pressure-reducing valves (recommended range 0.01–0.1 MPa) and that the rotary vacuum pump is ready. 2. Power on the furnace, the PID temperature controller, the mass flow controllers, and the vacuum pump unit. Verify the digital pressure gauge, over-temperature alarm, and MFC readiness signals are all normal. 3. Load the substrate or sample into a suitable holder, then insert into the quartz tube (Φ50 × 800 mm) within the 200 mm heating zone. 4. Install and seal the customizable flanges with their gas valves. 5. If pre-evacuation is required: start the rotary vacuum pump and evacuate the system to the target base pressure (ultimate 10 Pa), monitoring the digital pressure gauge throughout. 6. Once the target vacuum is reached, introduce the process gas(es) through the mass flow controllers. Set each channel’s flow rate independently using the MFC controls. Keep total gas flow rate below 200 SCCM to avoid thermal shock to the heated quartz tube. Furnace tube internal pressure must not exceed 0.02 MPa. 7. On the PID controller (or LCD touch screen if equipped), program the target temperature profile (up to 30 stages), including heating rate (0–20 °C/min, recommended 0–10 °C/min), hold temperatures (≤ 1100 °C working / 1200 °C maximum), hold times, and cooling rate. 8. Initiate the heating program; PID + self-tuning control manages the temperature profile with ±1 °C accuracy. Monitor the temperature, pressure gauge, and MFC flow readings throughout the run. 9. When the furnace body temperature is above 1000 °C, the furnace tube must not be under vacuum — internal pressure must be maintained at or above atmospheric pressure. 10. After the program completes, allow the furnace to cool to a safe handling temperature, stop the gas flows, vent the system to atmospheric pressure, then open the flanges and remove the sample. 11. After each run, inspect the quartz tube, flange seals, MFC connections, vacuum pump, dust filter, and heating element for wear or contamination.
Important Operating Notices:
- Furnace tube internal pressure must not exceed 0.02 MPa — exceeding this limit may cause furnace-tube rupture or flange ejection.
- Due to high internal gas-cylinder pressure, a pressure-reducing valve must be installed on the gas cylinder when feeding gas into the furnace tube. The recommended pressure-reducing-valve range is 0.01–0.1 MPa for accurate and safe operation.
- When the furnace body temperature is above 1000 °C, the furnace tube cannot be in vacuum — the internal pressure must equal atmospheric pressure.
- Gas flow rate entering the furnace tube must be less than 200 SCCM to avoid cold-flow thermal-shock impact on the heated quartz tube.
- The long-term service temperature of the quartz tube is less than 1100 °C. Operating above this temperature for extended periods will cause deformation or failure.
- Do not close both the inlet and outlet valves simultaneously during heating. If both valves must be closed, continuously monitor the pressure gauge. If pressure exceeds 0.02 MPa, immediately open the vent valve to prevent tube rupture or flange ejection.
- When operating with H₂ or other flammable gases, follow standard laboratory safety protocols for gas handling, leak testing, and exhaust ventilation.
Packaging & Storage:
The XN-T1200-S5020-IC ships fully assembled, including the mini tube furnace with quartz tube (Φ50 × 800 mm, customizable), alumina ceramic fiber insulated furnace chamber, 0Cr27Al7Mo2 resistance wire heating element, N-type thermocouple, 30-stage PID programmable temperature controller with self-tuning and over-temperature alarm, customizable flanges with gas valves and pressure gauge, 2-channel gas-mixing unit with mass flow meters (±1% FS), rotary vacuum pump with dust filter and digital pressure gauge, and all standard connecting components. Install on a stable laboratory bench or floor in a clean, dry environment, away from corrosive atmospheres, with adequate clearance for the vacuum pump, gas lines, and operator access. Connect gas cylinders with pressure-reducing valves (recommended range 0.01–0.1 MPa) and to a power supply matching local electrical standards. Disconnect power and isolate gas supplies when the equipment is not in active use. Inspect the heating element, quartz tube, flange seals, MFC units, vacuum pump, and dust filter periodically for wear, contamination, or signs of degradation.
Safety:
For research and industrial laboratory use only. Do not exceed the maximum temperature (1200 °C) or sustain operation above the working temperature (1100 °C) for extended periods — exceeding these limits may damage the heating element, quartz tube, and furnace chamber. Furnace tube internal pressure must not exceed 0.02 MPa — exceeding this limit may cause furnace-tube rupture or flange ejection. Always install a pressure-reducing valve on the gas cylinder (recommended 0.01–0.1 MPa range) before feeding gas. Keep gas flow rate below 200 SCCM to avoid thermal shock to the heated quartz tube. When the furnace body temperature is above 1000 °C, maintain internal pressure at or above atmospheric — do not operate under vacuum at these temperatures. When operating with H₂ or other flammable/reactive gases, follow standard laboratory protocols for gas handling, leak testing, and exhaust ventilation. Always wear appropriate PPE (safety glasses, high-temperature gloves, lab coat) when loading or unloading samples, especially while the furnace is still hot. Allow the furnace to cool to a safe handling temperature before opening the flanges. Refer to the included user manual for complete safety and operating instructions.
Note: Specifications listed above are typical and for reference only. Actual performance depends on the specific substrate material, process gas composition, flow rates, temperature profile, vacuum level, and ambient operating conditions — consult published literature and our technical team for guidance on specific CVD process protocols. The XN-T1200-S5020-IC platform supports customization (tube size, number of gas channels, vacuum pump options) to match specific research requirements. For researchers exploring related laboratory equipment, see also Xnergy’s related products: Touch Screen CVD Tube Furnace XN-T1600 (1600 °C with 3-channel MFC gas mixing), Molecular Pump Tube Furnace XN-TG600-S120CK1 (600 °C, high vacuum 6.67×10⁻³ Pa), Dual Temperature Zone Tube Furnace XN-TG1100-S60LK2W (1200 °C dual-zone), Vacuum Tube Furnace XN-T1700-80 (1700 °C with rotary-vane vacuum pump), and the full Thermal Treatment Equipment category. For complete battery material research systems, see also Cathode Materials, Anode Materials, Solid-State Electrolytes, and Ball Milling equipment.




